Colour Alteration RGB LED Band gives you the befalling to actualize colourful, capricious ambience, all at the blow of a button. It shares abounding of the aforementioned characteristics as its individual colour counterpart, including complete adaptability of design, bespoke acid options and a 3m cocky adhering backing. However, there are some notable differences which accomplish it a fully-interactive lighting experience.
First, there are the LED chips themselves. Unlike the LED chips on individual colour band lights, which are alone able of recreating a individual colour, colour alteration band appearance able RGB LED Chips, which are able to charm a advanced palette of colours.
The acumen for this is that anniversary of the RGB LED chips is not in fact a individual LED chip, but rather three chips accumulated into one. The belletrist "RGB" angle for Red, Blooming and Blue, and refers to the three primary colours that the LEDs alloy at their source. By bearing these three colours in differing quantites they are able to carbon a abundant beyond spectrum of colour.
The colour produced by anniversary LED is controlled by signals which are announced to anniversary of the three centralized LEDs, via the three (red, green, and blue) arresting affairs on the four amount cable acclimated by colour alteration LED Tape. These signals arise from an LED controller, which is in about-face controlled remotely, either through an infra red sensor or radio frequencies. The ambassador is an added assemblage which is installed amid the LED disciplinarian and band light.
Programming the LED Band is adequately aboveboard and is usually accomplished via a limited ascendancy supplied with the LED controller. As able-bodied as a ambit of changeless colour options, RGB band is aswell able of activating modes with capricious speeds and brightnesses.
If you are application an awfully ample accession you may crave the accession of an LED amplifier. These are advised to addition the arresting to the LED Band Lights by renewing the amplitude of the electrical accepted and should be installed wherever necessary.
Your all-embracing bureaucracy should abide of the afterward units:
- the colour alteration RGB LED Tape;
- an LED Ambassador (either RF or IR);
- an LED Disciplinarian (suitably sized);
- an amplifer(s) (if necessary).
RGB LED Tapes are currently acclimated in Lacoste food all beyond the UK area they add a ablution of colour to the high walls and ceilings. The aftereffect they aftermath is abundantly beautiful and acts as a absolute advertise for this able and activity able technology.
2013年1月28日星期一
2013年1月21日星期一
How to Improve White SMD Package Yields Can Effectively Reduce Production Costs
LED Engineering roundup with the package form of pluralistic development, more and more enterprises SMD LED package , competition is relatively intense. The raw materials used by the various companies in the industry are more or less the same, the difference is not gold wire , chip , glue, phosphor , such as stents, the prices are relatively transparent. Then, in the fierce competition in the market in order to earn a little small profit margins, key depends on "internal strength" shades of white light package engineers enterprises , the selection of raw materials and with particularly important.
About raw materials, the same batch of LED chips, and some corporate yield can only do 80% (20% of the BIN foreign goods), some companies are able to do 90% yield, the difference is very large, the yield of determines the level of increase or decrease of the final cost of the consignment. Many factors affect the yield, such as the viscosity of the silica gel and the particle size of the phosphor uniformity, etc. has a different effect, the viscosity is too low, the glue with the larger particles of the phosphor in the production process consistency is difficult to be controlled, prone to a lot of the BIN the outer product will increase the waste of raw materials to raise the overall cost of production. If the calculation of the total production costs (needed for the production of all raw materials costs and staff salaries, electricity and other costs), down this consignment production result is definitely a big loss. SMD3528 package, for example, if the yield is increased by 5%, the number of the yield and then do 1KK large cargo will increase to 50,000 lights in line with customer requirements, the market price of 50,000 lights total about 7000-10000 yuan or so. That is, if the yield in the production process has not been effectively improved, a loss of this value, thereby increasing the cost of production.
Improve white SMD yield in phosphor selection is very important, you need to select the phosphors suitable for SMD package dedicated , so with a the SMD package special glue to be able to make a perfect product. Imported phosphor prices and domestic phosphor price difference of nearly 1,000 yuan / 100 grams. Domestic phosphor cheap, but production and production yield is not high, from the price point of view of the surface to be able to reduce costs, in fact, ultimately increase the total cost of production, the above example illustrates this problem. Imported phosphor production technology is more mature and stable, is gaining the favor of the majority of white SMD manufacturers, such as Hongdae introduced H102, H132 (H102 is the upgraded version of the original old models of 00902, H132 is the original old models of 432 upgrade version), these two phosphor particle size 13um, particle size in the middle with moderate viscosity glue (such as: Shin-Etsu, 1018), coupled with strict control on made to improve the yield change very easy. If this calculated, to improve the yield of the phosphor Although a little expensive, but the cost of the entire process over to count, may still be imported phosphor lower cost, better for companies to create more profit margins.
Phosphor for phosphor for white engineers are misread. Not the larger particles phosphor the higher light efficiency, large phosphor particles requires a wavelength corresponding to large size blue chip excited to be able to play the best results. Larger phosphor particles suitable for high-power aspects of the package , because the high power LED corporate general monthly production capacity is not very high, the overall effect looks very different. SMD on different enterprises are generally put into operation on KK-class production, can only improve the yield increase its shipping rates to maximize profits.
About raw materials, the same batch of LED chips, and some corporate yield can only do 80% (20% of the BIN foreign goods), some companies are able to do 90% yield, the difference is very large, the yield of determines the level of increase or decrease of the final cost of the consignment. Many factors affect the yield, such as the viscosity of the silica gel and the particle size of the phosphor uniformity, etc. has a different effect, the viscosity is too low, the glue with the larger particles of the phosphor in the production process consistency is difficult to be controlled, prone to a lot of the BIN the outer product will increase the waste of raw materials to raise the overall cost of production. If the calculation of the total production costs (needed for the production of all raw materials costs and staff salaries, electricity and other costs), down this consignment production result is definitely a big loss. SMD3528 package, for example, if the yield is increased by 5%, the number of the yield and then do 1KK large cargo will increase to 50,000 lights in line with customer requirements, the market price of 50,000 lights total about 7000-10000 yuan or so. That is, if the yield in the production process has not been effectively improved, a loss of this value, thereby increasing the cost of production.
Improve white SMD yield in phosphor selection is very important, you need to select the phosphors suitable for SMD package dedicated , so with a the SMD package special glue to be able to make a perfect product. Imported phosphor prices and domestic phosphor price difference of nearly 1,000 yuan / 100 grams. Domestic phosphor cheap, but production and production yield is not high, from the price point of view of the surface to be able to reduce costs, in fact, ultimately increase the total cost of production, the above example illustrates this problem. Imported phosphor production technology is more mature and stable, is gaining the favor of the majority of white SMD manufacturers, such as Hongdae introduced H102, H132 (H102 is the upgraded version of the original old models of 00902, H132 is the original old models of 432 upgrade version), these two phosphor particle size 13um, particle size in the middle with moderate viscosity glue (such as: Shin-Etsu, 1018), coupled with strict control on made to improve the yield change very easy. If this calculated, to improve the yield of the phosphor Although a little expensive, but the cost of the entire process over to count, may still be imported phosphor lower cost, better for companies to create more profit margins.
Phosphor for phosphor for white engineers are misread. Not the larger particles phosphor the higher light efficiency, large phosphor particles requires a wavelength corresponding to large size blue chip excited to be able to play the best results. Larger phosphor particles suitable for high-power aspects of the package , because the high power LED corporate general monthly production capacity is not very high, the overall effect looks very different. SMD on different enterprises are generally put into operation on KK-class production, can only improve the yield increase its shipping rates to maximize profits.
2013年1月13日星期日
64 High-power Lighting-class LED Packaging Technology - 2
(2) Power LED combination of multi-chip package
The hexagonal aluminum substrate having a diameter of 3.175cm (1.25 inches), the light emitting region is located in its central portion, about 0.9525cm (0.375 inches) in diameter, which can accommodate 40 of the LED chip. The thermal liner, and the chip through bonding wires on a substrate made of the aluminum plate as the two points of contact with the positive electrode and the negative electrode connected. According to the size of the optical power of the desired output to determine the number of the substrate arranged on the die, the combination ultrahigh brightness chip package including AlGaInN and AlGaInP, they emitted light may be monochrome, color (RGB), white (RGB three primaries synthesis or by the blue and yellow binary synthesis). Finally, a high refractive index material to be encapsulated in accordance with the shape of the optical design, not only a high light extraction efficiency, but also to the chip and the bonding of the leads to be protected. 40 AlGaInP (AS) chip combo package LED luminous efficiency of 20lm / W. Using a combination of RGB three primary colors of synthetic white encapsulation module, when the mixing ratio of 0:43 (R) 0:48 (G): 0.009 (B) when a typical value for the luminous flux is 100lm, the the CCT standard color temperature is 4420K, the color coordinates x 0.3529 to 0.3612, y. This shows that this kind of power type LED the conventional chip for high-density combination package can reach a higher level of brightness with low thermal resistance, can work in the high-current and high optical output power.
Portfolio of multi-chip package high power LEDs, its structure and package more. The the American the UOE company in 2001 launched a portfolio of multi-chip package Norlux series LED, its structure is adopted the hexagonal aluminum plate as the substrate. Lanina Ceramics in 2003 to launch a low temperature co-fired ceramic (LTCC-M) technology package on the metal substrate using the company's proprietary high-power LED array. Panasonic introduced in 2003 high power white LED package 64 only chip combination. Nichia launched in 2003, the ultra-high brightness white LED luminous flux of up to 600lm output beam 1000lm, the power consumption of 30W, maximum input power of 50W up to 33lm / W luminous efficiency of white LED module. MB series of high-power LED characteristics of Taiwan UEC (the Guolian) company metal bonding (Metal Bonding) technology package, instead of using Si GaAs substrate, thermal effects, and as the light reflective layer to metal bonding layer to improve light output.
Power type LED thermal characteristics directly affect the LED's operating temperature, luminous efficiency, emission wavelength, life, power type LED chip package design, manufacturing technology is particularly important. The main issues to be considered in the high-power LED packaging:
(1) The cooling. Cooling is essential for power LED devices. If you can not dissipate the heat generated by the current in a timely manner to maintain the junction temperature of the PN junction within the allowable range, would not be able to obtain a stable light output and maintenance of the normal lifetime of the devices.
In the common heat sink material in the highest thermal conductivity of silver, but the high cost of silver, unsuitable for the universal type radiator. The thermal conductivity of copper is close to the silver, and its cost is lower than silver. Although the thermal conductivity of aluminum is lower than copper, but its lowest cost, is conducive to large-scale manufacturing.
After experimental comparison found a more appropriate approach is: connect the chip part of the copper-based or silver-based thermal liner, high thermal conductivity of the thermal liner connection aluminum radiator, ladder-type thermal structure, the use of copper or silver will efficient transfer of heat generated by the chip to the aluminum radiator, aluminum radiator to dissipate the heat (shed by air cooling or heat conduction). The advantages of this approach are: fully consider the value for money of the radiator, and together the different characteristics of the radiator, so that efficient cooling rationalization and cost control.
It should be noted that: the choice of material connected to the copper-based thermal liner with the chip is very important, the LED used in the chip-connecting material is silver glue. However, after a study found that the thermal resistance of the silver colloid is 10 ~ 25W / (m · K), if the use of silver gum as a connecting material, it is equal to artificially coupled with a thermal resistance between the chip and the thermal liner. Further, after curing of the silver plastic inner basic structure the epoxy skeleton + the amalgam fillings thermal conductive structure and a high thermal resistance of such a structure and lower TG point, extremely unfavorable for the stability of the cooling device and physical properties. Practice to solve this problem is: to tin plate welding as the material of the connection between the grain and the thermal liner [tin thermal conductivity of 67W / (m · K)], can be obtained an ideal thermal effects (thermal resistance of about 16 ℃ / W). Tin thermal effects and physical properties far superior to the silver plastic.
(2) the light. Conventional LED device package, only use the chip emits about 50% of the light, due to the refractive index of the semiconductor closed epoxy difference larger, resulting in the internal total reflection critical angle is small, the active layer generates light only small portion is removed, most of the light through multiple reflections inside the chip is absorbed, and this is the fundamental reason of the high brightness LED chip light extraction efficiency is very low. Between different materials of the internal refraction, reflection 50% of the consumed energy be utilized, is the design of the key of the optical coefficients.
Can be more effective than conventional LED chip packaging technology light exit through the chip's flip (Flip Chip) technology. If, however, it is to say in the light-emitting layer and the electrode of the chip below increases the reflective layer to reflect the light energy of a waste, will result in loss of about 8% of the light reflective layer, so the base plate material must be increased. The chip side surface of the light must also be used to heat the lining of the mirror machining method to be reflected, to increase the device out of the light-receiving rate. The optical combination of surface and in the portion of the sapphire substrate of the flip chip with the epoxy resin derivative should be added to a layer of silicone material, to improve the chip out of the refractive index of the light.
After the improvement of the optical packaging technology, can significantly improve the high-power LED devices the Idemitsu rate (flux). Lens optical design of the top of the high-power LED devices is also very important, the usual practice is: and during optical lens design should take full account of the the final lighting fixtures optical design requirements, as far as possible with the application of optical lighting equipment requirements for the design.
Common lens shape: convex lens, a concave cone lens, spherical lens, a Fresnel lens, and a combined lens. Lens with high-power LED devices ideal assembly method is to take a hermetic package, semi-hermetic package can also be taken, if the lens shape. The lens material should be selected high transmittance of synthetic materials such as glass or acrylic, and may also be used conventional epoxy modular package, together with the secondary thermal design which can achieve the effect to improve the light-receiving rate.
3. Power type LED progress
Power type LED development began in the mid-1960s, the GaAs infrared light source, because of its high reliability, small size, light weight, low voltage, first used in military night vision equipment, to replace the original Some incandescent 1980s InGaAsP / InP double heterojunction infrared light source is used for some special test equipment to replace the original volume, short life xenon lamp. This infrared light source DC operating current of up to 1A pulse current up to 24A. Infrared light source fall early power LED, but it has been developed so far, constantly upgrading products more widely, and become light power type LED technology base inheritable.
In 1991, red, orange, yellow the AlGaInP power type of LED practical application of LED from indoor to outdoor, successfully used in a variety of traffic lights, car tail lights, directional lights and outdoor information display. Blue, of green AlGaInN high brightness LED have developed successful, the realization of ultra-high brightness LED full color for lighting, however, is another new field of ultra-high brightness LED expansion, replace incandescent and fluorescent lamps with LED solid-state light LED Development Goals and other traditional glass bulb lighting source has become. Therefore, the power LED R & D and industrialization will become another important direction for future development, the key is to continuously improve the luminous efficiency of each device (component) luminous flux. Power type LED epitaxial material using an MOCVD epitaxial growth techniques and multiple quantum well structure, although the need to further improve the internal quantum efficiency, but the greatest obstacle to obtain a high luminous flux is still very low light extraction efficiency of the chip. Follows traditional indicator LED package structure, the operating current is generally limited to 20mA. According to this conventional concept design and production of power type LED simply can not achieve the requirements of high efficiency and high flux. In order to improve the visible power LED luminous efficiency and luminous flux, must adopt a new design concept, on the one hand, through the design of a new chip architecture to increase light extraction efficiency, on the other hand, by increasing the chip area, and increase the operating current, low thermal resistance The packaging structure to improve the photoelectric conversion efficiency of the device. Therefore, the design and production of the new chip and package structure, and continuously improve the light extraction efficiency of the device and photoelectric conversion efficiency has been a crucial issue in the development of power type LED.
Power type LED greatly expanding the application of LED in the signal display and the field of lighting source, automotive interior and exterior lights and traffic lights, including urban transport, railways, highways, airports, seaports, lighthouses, safety warning lights, etc.. Power white LED as special illumination source has started for the automotive and aircraft reading lights, portable lighting source (such as a key light, flashlight), backlight and miners lamps has also been an increasing number of applications. White addition of synthesized by the three primary colors, but also through a specially designed phosphor coated on the GaN blue or ultraviolet wavelength of the power-type LED chips are formed. Power type LED in building decorative lighting, stage lighting, store windows, lighting, advertising light boxes lighting, garden lawn lighting, city night scene compared to their similar products shows its unique characteristics. Use power type RGB tricolor LED, can be made into a compact structure, the tone light source of high luminous efficiency than traditional incandescent light source digital tune, with computer-controlled technology, can be obtained very colorful glow. Power type LED low voltage, low power consumption, small size, light weight, long life, high reliability, it can also serve as the military field, diving, aerospace, aviation, special solid light source.
Optimize the design of the progress of the power type LED structure, take the heat and light lining continuously improve its luminous efficiency and luminous flux from multiple 5mm LED lamp panel and lamp assembly will be replaced by power type LED assembly wick. From 1970 to 2000, the last 30 years, the luminous flux every 18 to 24 months to 2-fold increase. Since the advent of the 1998 Norlux Series Power LED, luminous flux increasing trend faster.
With the improvement of the performance of power type LED, LED lighting source has attracted greater attention in the field of lighting. General lighting market demand is huge, power white LED technology will be better able to adapt to the application of the general lighting. Sustainable development direction as long as the LED industry, LED solid-state lighting will be achieved in the next five to 10 years, a major breakthrough in the market.
The hexagonal aluminum substrate having a diameter of 3.175cm (1.25 inches), the light emitting region is located in its central portion, about 0.9525cm (0.375 inches) in diameter, which can accommodate 40 of the LED chip. The thermal liner, and the chip through bonding wires on a substrate made of the aluminum plate as the two points of contact with the positive electrode and the negative electrode connected. According to the size of the optical power of the desired output to determine the number of the substrate arranged on the die, the combination ultrahigh brightness chip package including AlGaInN and AlGaInP, they emitted light may be monochrome, color (RGB), white (RGB three primaries synthesis or by the blue and yellow binary synthesis). Finally, a high refractive index material to be encapsulated in accordance with the shape of the optical design, not only a high light extraction efficiency, but also to the chip and the bonding of the leads to be protected. 40 AlGaInP (AS) chip combo package LED luminous efficiency of 20lm / W. Using a combination of RGB three primary colors of synthetic white encapsulation module, when the mixing ratio of 0:43 (R) 0:48 (G): 0.009 (B) when a typical value for the luminous flux is 100lm, the the CCT standard color temperature is 4420K, the color coordinates x 0.3529 to 0.3612, y. This shows that this kind of power type LED the conventional chip for high-density combination package can reach a higher level of brightness with low thermal resistance, can work in the high-current and high optical output power.
Portfolio of multi-chip package high power LEDs, its structure and package more. The the American the UOE company in 2001 launched a portfolio of multi-chip package Norlux series LED, its structure is adopted the hexagonal aluminum plate as the substrate. Lanina Ceramics in 2003 to launch a low temperature co-fired ceramic (LTCC-M) technology package on the metal substrate using the company's proprietary high-power LED array. Panasonic introduced in 2003 high power white LED package 64 only chip combination. Nichia launched in 2003, the ultra-high brightness white LED luminous flux of up to 600lm output beam 1000lm, the power consumption of 30W, maximum input power of 50W up to 33lm / W luminous efficiency of white LED module. MB series of high-power LED characteristics of Taiwan UEC (the Guolian) company metal bonding (Metal Bonding) technology package, instead of using Si GaAs substrate, thermal effects, and as the light reflective layer to metal bonding layer to improve light output.
Power type LED thermal characteristics directly affect the LED's operating temperature, luminous efficiency, emission wavelength, life, power type LED chip package design, manufacturing technology is particularly important. The main issues to be considered in the high-power LED packaging:
(1) The cooling. Cooling is essential for power LED devices. If you can not dissipate the heat generated by the current in a timely manner to maintain the junction temperature of the PN junction within the allowable range, would not be able to obtain a stable light output and maintenance of the normal lifetime of the devices.
In the common heat sink material in the highest thermal conductivity of silver, but the high cost of silver, unsuitable for the universal type radiator. The thermal conductivity of copper is close to the silver, and its cost is lower than silver. Although the thermal conductivity of aluminum is lower than copper, but its lowest cost, is conducive to large-scale manufacturing.
After experimental comparison found a more appropriate approach is: connect the chip part of the copper-based or silver-based thermal liner, high thermal conductivity of the thermal liner connection aluminum radiator, ladder-type thermal structure, the use of copper or silver will efficient transfer of heat generated by the chip to the aluminum radiator, aluminum radiator to dissipate the heat (shed by air cooling or heat conduction). The advantages of this approach are: fully consider the value for money of the radiator, and together the different characteristics of the radiator, so that efficient cooling rationalization and cost control.
It should be noted that: the choice of material connected to the copper-based thermal liner with the chip is very important, the LED used in the chip-connecting material is silver glue. However, after a study found that the thermal resistance of the silver colloid is 10 ~ 25W / (m · K), if the use of silver gum as a connecting material, it is equal to artificially coupled with a thermal resistance between the chip and the thermal liner. Further, after curing of the silver plastic inner basic structure the epoxy skeleton + the amalgam fillings thermal conductive structure and a high thermal resistance of such a structure and lower TG point, extremely unfavorable for the stability of the cooling device and physical properties. Practice to solve this problem is: to tin plate welding as the material of the connection between the grain and the thermal liner [tin thermal conductivity of 67W / (m · K)], can be obtained an ideal thermal effects (thermal resistance of about 16 ℃ / W). Tin thermal effects and physical properties far superior to the silver plastic.
(2) the light. Conventional LED device package, only use the chip emits about 50% of the light, due to the refractive index of the semiconductor closed epoxy difference larger, resulting in the internal total reflection critical angle is small, the active layer generates light only small portion is removed, most of the light through multiple reflections inside the chip is absorbed, and this is the fundamental reason of the high brightness LED chip light extraction efficiency is very low. Between different materials of the internal refraction, reflection 50% of the consumed energy be utilized, is the design of the key of the optical coefficients.
Can be more effective than conventional LED chip packaging technology light exit through the chip's flip (Flip Chip) technology. If, however, it is to say in the light-emitting layer and the electrode of the chip below increases the reflective layer to reflect the light energy of a waste, will result in loss of about 8% of the light reflective layer, so the base plate material must be increased. The chip side surface of the light must also be used to heat the lining of the mirror machining method to be reflected, to increase the device out of the light-receiving rate. The optical combination of surface and in the portion of the sapphire substrate of the flip chip with the epoxy resin derivative should be added to a layer of silicone material, to improve the chip out of the refractive index of the light.
After the improvement of the optical packaging technology, can significantly improve the high-power LED devices the Idemitsu rate (flux). Lens optical design of the top of the high-power LED devices is also very important, the usual practice is: and during optical lens design should take full account of the the final lighting fixtures optical design requirements, as far as possible with the application of optical lighting equipment requirements for the design.
Common lens shape: convex lens, a concave cone lens, spherical lens, a Fresnel lens, and a combined lens. Lens with high-power LED devices ideal assembly method is to take a hermetic package, semi-hermetic package can also be taken, if the lens shape. The lens material should be selected high transmittance of synthetic materials such as glass or acrylic, and may also be used conventional epoxy modular package, together with the secondary thermal design which can achieve the effect to improve the light-receiving rate.
3. Power type LED progress
Power type LED development began in the mid-1960s, the GaAs infrared light source, because of its high reliability, small size, light weight, low voltage, first used in military night vision equipment, to replace the original Some incandescent 1980s InGaAsP / InP double heterojunction infrared light source is used for some special test equipment to replace the original volume, short life xenon lamp. This infrared light source DC operating current of up to 1A pulse current up to 24A. Infrared light source fall early power LED, but it has been developed so far, constantly upgrading products more widely, and become light power type LED technology base inheritable.
In 1991, red, orange, yellow the AlGaInP power type of LED practical application of LED from indoor to outdoor, successfully used in a variety of traffic lights, car tail lights, directional lights and outdoor information display. Blue, of green AlGaInN high brightness LED have developed successful, the realization of ultra-high brightness LED full color for lighting, however, is another new field of ultra-high brightness LED expansion, replace incandescent and fluorescent lamps with LED solid-state light LED Development Goals and other traditional glass bulb lighting source has become. Therefore, the power LED R & D and industrialization will become another important direction for future development, the key is to continuously improve the luminous efficiency of each device (component) luminous flux. Power type LED epitaxial material using an MOCVD epitaxial growth techniques and multiple quantum well structure, although the need to further improve the internal quantum efficiency, but the greatest obstacle to obtain a high luminous flux is still very low light extraction efficiency of the chip. Follows traditional indicator LED package structure, the operating current is generally limited to 20mA. According to this conventional concept design and production of power type LED simply can not achieve the requirements of high efficiency and high flux. In order to improve the visible power LED luminous efficiency and luminous flux, must adopt a new design concept, on the one hand, through the design of a new chip architecture to increase light extraction efficiency, on the other hand, by increasing the chip area, and increase the operating current, low thermal resistance The packaging structure to improve the photoelectric conversion efficiency of the device. Therefore, the design and production of the new chip and package structure, and continuously improve the light extraction efficiency of the device and photoelectric conversion efficiency has been a crucial issue in the development of power type LED.
Power type LED greatly expanding the application of LED in the signal display and the field of lighting source, automotive interior and exterior lights and traffic lights, including urban transport, railways, highways, airports, seaports, lighthouses, safety warning lights, etc.. Power white LED as special illumination source has started for the automotive and aircraft reading lights, portable lighting source (such as a key light, flashlight), backlight and miners lamps has also been an increasing number of applications. White addition of synthesized by the three primary colors, but also through a specially designed phosphor coated on the GaN blue or ultraviolet wavelength of the power-type LED chips are formed. Power type LED in building decorative lighting, stage lighting, store windows, lighting, advertising light boxes lighting, garden lawn lighting, city night scene compared to their similar products shows its unique characteristics. Use power type RGB tricolor LED, can be made into a compact structure, the tone light source of high luminous efficiency than traditional incandescent light source digital tune, with computer-controlled technology, can be obtained very colorful glow. Power type LED low voltage, low power consumption, small size, light weight, long life, high reliability, it can also serve as the military field, diving, aerospace, aviation, special solid light source.
Optimize the design of the progress of the power type LED structure, take the heat and light lining continuously improve its luminous efficiency and luminous flux from multiple 5mm LED lamp panel and lamp assembly will be replaced by power type LED assembly wick. From 1970 to 2000, the last 30 years, the luminous flux every 18 to 24 months to 2-fold increase. Since the advent of the 1998 Norlux Series Power LED, luminous flux increasing trend faster.
With the improvement of the performance of power type LED, LED lighting source has attracted greater attention in the field of lighting. General lighting market demand is huge, power white LED technology will be better able to adapt to the application of the general lighting. Sustainable development direction as long as the LED industry, LED solid-state lighting will be achieved in the next five to 10 years, a major breakthrough in the market.
64 High-power Lighting-class LED Packaging Technology - 1
From the point of view of practical application, installation is simple to use, the relatively small volume of high-power LED devices in most lighting applications will replace traditional power led devices. Small power LED lighting in order to meet the needs of the lighting, the focus must be on many LED light energy in order to meet the design requirements, but the drawback is that the line is very complex, poor heat dissipation, in order to balance the current between each LED voltage relationship, must be designed to the complexity of the power supply circuit. In contrast, the power of the high-power single LED is much larger than the number of small power LED the sum of the power supply line is relatively simple, perfect heat dissipation structure, physical properties and stability. So, packaging methods and packaging materials for high-power LED devices can not simply apply the traditional low-power LED devices and packaging methods and packaging materials. A new and higher requirements for large power dissipation, large heat and high light efficiency to LED packaging technology, packaging equipment and packaging materials.
1. High power LED chip
In order to get a high-power LED devices, it is necessary to prepare a suitable high-power LED chips. The usual method of manufacturing high power LED chip are summarized as follows:
(1) Increase the size of law. By increasing the effective light emitting area and size of single LED, prompting the current flowing through the TCL layers uniformly distributed, in order to achieve the desired luminous flux. However, simply increasing the light-emitting area can not solve the heat problem and the light problem, and not achieve the desired luminous flux and the practical application of the effect.
(2) Silicon backplane flip method. First preparing a large-size LED chip suitable for eutectic soldering, to simultaneously prepare the corresponding size of the silicon substrate and the silicon substrate to produce for eutectic soldering with a gold conductive layer and leads to the electrically conductive layer (Ultrasonic gold ball pads) , and then use the eutectic soldering device of the large-size LED chip and the silicon substrate are welded together. This structure is more reasonable, considering both the light problem, taking into account the heat problem, which is the current mainstream high power LED production.
American Lumileds, developed in 2001 AlGaInN power flip chip (FCLED) structure, the manufacturing process: First, the thickness of greater than 500A NiAu layer deposited on the top of the p-type GaN epitaxial wafers, used for ohmic contact and back reflector; then using a mask to select the P-type layer and multi-quantum well active layer is etched away, exposing the N-type layer; deposition, etching to form the N-type ohmic contact layer, a chip size of 1mm × 1mm, the P-type ohmic contact is square, N-type ohmic contact to comb inserted therein, so that the current extension distance can be shortened, the spreading resistance is minimized; then flip chip soldering metal bumps AlGaInN having anti-static protection diode (ESD) of the The silicon carrier.
(3) ceramic substrate flip. First use of the generic device of the LED chip having a suitable eutectic welding electrode structure of the large out of the light area of the LED chip and the corresponding ceramic base plate was prepared, and on the ceramic substrate produced a eutectic soldering conductive layer and leads to the conductive layer, and then using eutectic soldering The equipment will be large-size LED chip and the ceramic substrate are welded together. This structure not only consider the light problems also take into account the heat problem, and ceramic floor for high thermal conductivity ceramic plates, the cooling effect is very ideal, the price is relatively low, so for more suitable substrate material, and may in the future IC integration package reserved space.
(4) sapphire substrate transition method. InGaN chip in accordance with the traditional method of manufacturing a PN junction is grown on a sapphire substrate, sapphire substrate removal, and then connect to the traditional four-membered, material and manufacture of the large size of the blue LED chip of the upper and lower electrode structures.
(5) The AlGaInN silicon carbide (SiC) on the back light method. Cree Inc., USA is the world's only SiC substrate manufacturing AlGaInN high brightness LED manufacturers, the past few years its production AlGaInN / SiCa chip structure continue to improve brightness and continuously improve. As the P-type and N-type electrode, respectively, located in the bottom and top of the chip, the use of single-wire bonding, better compatibility, ease of use, and thus become another mainstream products of the the AlGaInN LED development.
2. The power-type package
Power LED was first started in the HP "piranhas" package LED structure introduced in the early 1990s, launched the company in 1994 improved "Snap LED" There are two operating current of 70mA and 150mA, input power up to 0.3W. The power LED input power than the original bracket encapsulated LED input power is increased several times, thermal resistance is reduced fraction of the original. W-class power LEDs is a core part of the future of lighting devices, so the world's major companies have invested a great deal of effort watt-level power LED packaging technology research and development.
LED chip and packaging to the direction of the high-power development, large current is 10 to 20 times more than φ5mm LED luminous flux, we must solve the problem of bad light, effective heat dissipation without deterioration of the packaging materials, shell and tube, and the package is its The key technologies, be able to withstand a few watts of power LED packaging. 5W series of white, green, blue-green, blue power LED from early 2003 to market, white LED light output of 187lm luminous efficiency for 44.3lm / W. Developed can withstand 10W power LED, the use of a large area of the die size of 2.5mm × 2.5 mm in 5A current, light output up to 200lm.
LUXEON series power LED the AlGaInN power-type flip-die flip chip bonding with solder bumps on the silicon carrier, and then the completion of the flip chip bonding silicon carrier loaded in the thermal liner and the shell, the bonding wires to be encapsulated. This encapsulation of the light extraction efficiency, thermal properties, and are designed to increase the operating current density.
In the application, can be encapsulated product assembly in a metal core PCB, with aluminum interlayer, forming power density type LED PCB board as the wiring of the device electrodes is connected to use, the aluminum sandwich can be used as a thermal liner to to obtain a higher luminous flux and photoelectric conversion efficiency. In addition, the encapsulated SMD LED very small, and can be flexibly combined, constitute a module type light guide plate-type condenser type, reflective type colorful lighting source.
High brightness LED lights and other auxiliary lighting source applications, generally the multiple Φ5mm package a variety of monochrome and white LED assembly on a lamp panel or standard lamp holder, life can reach 100,000 hours. 2000 studies have pointed out the white LED work 6000h in Φ5mm, its intensity has been reduced to half its original. In fact, the use of Φ5mm white LED array light-emitting device, its life may be 5000h. Different color LED light attenuation at different speeds, the slowest which red, blue, green center, white fastest. Used only for indicator LED original Φ5mm package, package thermal resistance up to 300 ° C / W, can not be fully heat dissipation, resulting in elevated temperature of the LED chip, causing the devices optical attenuator accelerated. In addition, the epoxy yellowing will reduce the light output. High Power LED generated in the high current white LED is 10 to 20 times more luminous flux than Φ5mm effective thermal design and the use of packaging material does not deteriorate to solve the problem of bad light, shell and tube, and the package has become the development of high-power LED one of the key technologies. New LED power-type packaging design concept mainly grouped into two categories, a class of single-chip power package, and the other for multi-chip power package.
(1) Single-chip power type LED package
1998 American Lumileds developed Luxeon high-power LED series single-chip package structure, this power single-chip LED package structure with conventional Φ5mm LED package structure is completely different, it is a positive light LED chip soldered directly to the thermal liner The LED chip, or on the back of light first flip-chip having solder bumps on the silicon carrier, and then welding on the thermal liner, so that large area chips in the large current, the thermal characteristics of the work is improved. This package light extraction efficiency, thermal performance and current density of the design are the best, its main features are:
A. Low thermal resistance. The conventional epoxy Packaging has high thermal resistance, and thermal resistance of this new structure of a package is typically only 14 ° C / W, can be reduced to 1/20 of the conventional LED.
B. High reliability. Filled inside a stable, flexible gel, at 40 to 120 ° C, the internal stress generated due to sudden changes in temperature will not make the gold and the frame lead is disconnected. With this silicone rubber as the sealing material of the optical coupling, does not appear as yellowing of ordinary optical epoxy, the metal lead frame is also not due to oxidation and dirt.
C. Reflector cup and lens design so that the radiation controlled, the highest optical efficiency. In applications they can be assembled in one with aluminum interlayer circuit board (aluminum PCB) on the circuit board as the wiring of the device electrodes is connected with the the aluminum sandwich can be as a power type LED thermal liner. So that not only a high luminous flux can be obtained, but also has a high photoelectric conversion efficiency.
Single-chip W-class power LED was first introduced in 1998 by Lumileds Luxeon LED, the characteristics of the package structure thermoelectric form of separation, the flip-chip silicon carrier is soldered directly to the thermal liner and reflective cup optical lens and a flexible transparent plastic new structures and new materials, high-power single-chip 1W, 3W and 5W LED products are available now. OSRAM 2003 Golden Dragon series of single-chip LED, its structure is characterized by a thermal liner is in direct contact with the metal circuit board has good heat dissipation, input power up to 1W.
1. High power LED chip
In order to get a high-power LED devices, it is necessary to prepare a suitable high-power LED chips. The usual method of manufacturing high power LED chip are summarized as follows:
(1) Increase the size of law. By increasing the effective light emitting area and size of single LED, prompting the current flowing through the TCL layers uniformly distributed, in order to achieve the desired luminous flux. However, simply increasing the light-emitting area can not solve the heat problem and the light problem, and not achieve the desired luminous flux and the practical application of the effect.
(2) Silicon backplane flip method. First preparing a large-size LED chip suitable for eutectic soldering, to simultaneously prepare the corresponding size of the silicon substrate and the silicon substrate to produce for eutectic soldering with a gold conductive layer and leads to the electrically conductive layer (Ultrasonic gold ball pads) , and then use the eutectic soldering device of the large-size LED chip and the silicon substrate are welded together. This structure is more reasonable, considering both the light problem, taking into account the heat problem, which is the current mainstream high power LED production.
American Lumileds, developed in 2001 AlGaInN power flip chip (FCLED) structure, the manufacturing process: First, the thickness of greater than 500A NiAu layer deposited on the top of the p-type GaN epitaxial wafers, used for ohmic contact and back reflector; then using a mask to select the P-type layer and multi-quantum well active layer is etched away, exposing the N-type layer; deposition, etching to form the N-type ohmic contact layer, a chip size of 1mm × 1mm, the P-type ohmic contact is square, N-type ohmic contact to comb inserted therein, so that the current extension distance can be shortened, the spreading resistance is minimized; then flip chip soldering metal bumps AlGaInN having anti-static protection diode (ESD) of the The silicon carrier.
(3) ceramic substrate flip. First use of the generic device of the LED chip having a suitable eutectic welding electrode structure of the large out of the light area of the LED chip and the corresponding ceramic base plate was prepared, and on the ceramic substrate produced a eutectic soldering conductive layer and leads to the conductive layer, and then using eutectic soldering The equipment will be large-size LED chip and the ceramic substrate are welded together. This structure not only consider the light problems also take into account the heat problem, and ceramic floor for high thermal conductivity ceramic plates, the cooling effect is very ideal, the price is relatively low, so for more suitable substrate material, and may in the future IC integration package reserved space.
(4) sapphire substrate transition method. InGaN chip in accordance with the traditional method of manufacturing a PN junction is grown on a sapphire substrate, sapphire substrate removal, and then connect to the traditional four-membered, material and manufacture of the large size of the blue LED chip of the upper and lower electrode structures.
(5) The AlGaInN silicon carbide (SiC) on the back light method. Cree Inc., USA is the world's only SiC substrate manufacturing AlGaInN high brightness LED manufacturers, the past few years its production AlGaInN / SiCa chip structure continue to improve brightness and continuously improve. As the P-type and N-type electrode, respectively, located in the bottom and top of the chip, the use of single-wire bonding, better compatibility, ease of use, and thus become another mainstream products of the the AlGaInN LED development.
2. The power-type package
Power LED was first started in the HP "piranhas" package LED structure introduced in the early 1990s, launched the company in 1994 improved "Snap LED" There are two operating current of 70mA and 150mA, input power up to 0.3W. The power LED input power than the original bracket encapsulated LED input power is increased several times, thermal resistance is reduced fraction of the original. W-class power LEDs is a core part of the future of lighting devices, so the world's major companies have invested a great deal of effort watt-level power LED packaging technology research and development.
LED chip and packaging to the direction of the high-power development, large current is 10 to 20 times more than φ5mm LED luminous flux, we must solve the problem of bad light, effective heat dissipation without deterioration of the packaging materials, shell and tube, and the package is its The key technologies, be able to withstand a few watts of power LED packaging. 5W series of white, green, blue-green, blue power LED from early 2003 to market, white LED light output of 187lm luminous efficiency for 44.3lm / W. Developed can withstand 10W power LED, the use of a large area of the die size of 2.5mm × 2.5 mm in 5A current, light output up to 200lm.
LUXEON series power LED the AlGaInN power-type flip-die flip chip bonding with solder bumps on the silicon carrier, and then the completion of the flip chip bonding silicon carrier loaded in the thermal liner and the shell, the bonding wires to be encapsulated. This encapsulation of the light extraction efficiency, thermal properties, and are designed to increase the operating current density.
In the application, can be encapsulated product assembly in a metal core PCB, with aluminum interlayer, forming power density type LED PCB board as the wiring of the device electrodes is connected to use, the aluminum sandwich can be used as a thermal liner to to obtain a higher luminous flux and photoelectric conversion efficiency. In addition, the encapsulated SMD LED very small, and can be flexibly combined, constitute a module type light guide plate-type condenser type, reflective type colorful lighting source.
High brightness LED lights and other auxiliary lighting source applications, generally the multiple Φ5mm package a variety of monochrome and white LED assembly on a lamp panel or standard lamp holder, life can reach 100,000 hours. 2000 studies have pointed out the white LED work 6000h in Φ5mm, its intensity has been reduced to half its original. In fact, the use of Φ5mm white LED array light-emitting device, its life may be 5000h. Different color LED light attenuation at different speeds, the slowest which red, blue, green center, white fastest. Used only for indicator LED original Φ5mm package, package thermal resistance up to 300 ° C / W, can not be fully heat dissipation, resulting in elevated temperature of the LED chip, causing the devices optical attenuator accelerated. In addition, the epoxy yellowing will reduce the light output. High Power LED generated in the high current white LED is 10 to 20 times more luminous flux than Φ5mm effective thermal design and the use of packaging material does not deteriorate to solve the problem of bad light, shell and tube, and the package has become the development of high-power LED one of the key technologies. New LED power-type packaging design concept mainly grouped into two categories, a class of single-chip power package, and the other for multi-chip power package.
(1) Single-chip power type LED package
1998 American Lumileds developed Luxeon high-power LED series single-chip package structure, this power single-chip LED package structure with conventional Φ5mm LED package structure is completely different, it is a positive light LED chip soldered directly to the thermal liner The LED chip, or on the back of light first flip-chip having solder bumps on the silicon carrier, and then welding on the thermal liner, so that large area chips in the large current, the thermal characteristics of the work is improved. This package light extraction efficiency, thermal performance and current density of the design are the best, its main features are:
A. Low thermal resistance. The conventional epoxy Packaging has high thermal resistance, and thermal resistance of this new structure of a package is typically only 14 ° C / W, can be reduced to 1/20 of the conventional LED.
B. High reliability. Filled inside a stable, flexible gel, at 40 to 120 ° C, the internal stress generated due to sudden changes in temperature will not make the gold and the frame lead is disconnected. With this silicone rubber as the sealing material of the optical coupling, does not appear as yellowing of ordinary optical epoxy, the metal lead frame is also not due to oxidation and dirt.
C. Reflector cup and lens design so that the radiation controlled, the highest optical efficiency. In applications they can be assembled in one with aluminum interlayer circuit board (aluminum PCB) on the circuit board as the wiring of the device electrodes is connected with the the aluminum sandwich can be as a power type LED thermal liner. So that not only a high luminous flux can be obtained, but also has a high photoelectric conversion efficiency.
Single-chip W-class power LED was first introduced in 1998 by Lumileds Luxeon LED, the characteristics of the package structure thermoelectric form of separation, the flip-chip silicon carrier is soldered directly to the thermal liner and reflective cup optical lens and a flexible transparent plastic new structures and new materials, high-power single-chip 1W, 3W and 5W LED products are available now. OSRAM 2003 Golden Dragon series of single-chip LED, its structure is characterized by a thermal liner is in direct contact with the metal circuit board has good heat dissipation, input power up to 1W.
2013年1月8日星期二
Innovative LED Retrofit Underground Garage Lighting Project
In recent years, the consumption of the underground garage lighting as LED lighting products listed attention. Essentially underground garage lighting power consumption problem is the management of the electricity. The slightest mistake, a lot of lighting became a long light. Long light power consumption is not only powerful, but also lead to entire lighting frequent system failures, and significant increase in maintenance costs. Therefore, a lot of the general situation of the underground garage lighting performance for power-intensive and frequent problems, management is difficult, maintenance costs are high, and failure constantly.
Shenzhen Xiang the innovative Electronic Science and Technology Co., Ltd. is committed to addressing the underground garage lighting power consumption problem conventional system energy saving technology program. In recent years, Cheung innovation for many underground garage lighting retrofits, recently, Cheung Innovation and Technology successfully completed the lighting renovation project is a well-known Beijing Building garage.
It is understood that a well-known buildings, underground garage lighting equipment will be replaced by Cheung innovative LED energy-saving lamps, and a total of 900 LED infrared sensor lamp, using the original lines, the lamp replaced all the energy-saving LED lights. Nobody, the lamp is dark, only 2.5 watts of power; someone has a car passed, brightness back to normal now, the power of 12 watts. Super power-saving LED infrared lamp lighting energy-saving than ordinary energy-saving lamps save 60% or more, plus Cheung innovative energy-saving control, energy saving can reach more than 80%.
Xiang innovative LED infrared lamp Features: Intelligent IC sound monitoring to control the car park each lighting LED infrared lamp, there is no vehicle access, all LED infrared lamp in a micro-light, super power saving mode, each LED infrared lamp-power 3-5W (arbitrarily chosen), to meet the requirements of the security monitoring lighting to save electricity, but also greatly limits. LED infrared lamps light a small decline: long life: Chung-hsiang, LED the infrared lamp using SMD3528 / 3014 and advanced production technology, light a small decline, the average life of 50,000 hours. 5000 hours average less than 8% of the light fades, 30,000 hours average less than 30% of the light fades. LED infrared lamp is easy to install, easy to maintain and do not need to change lamps, the Cheung LED infrared lamp replacement, without changing lines without modification ballast, you can simply remove the starter. No need to replace the starter to lower maintenance costs; electronic ballasts, shall remove the electronic ballast.
Shenzhen Xiang the innovative Electronic Science and Technology Co., Ltd. is committed to addressing the underground garage lighting power consumption problem conventional system energy saving technology program. In recent years, Cheung innovation for many underground garage lighting retrofits, recently, Cheung Innovation and Technology successfully completed the lighting renovation project is a well-known Beijing Building garage.
It is understood that a well-known buildings, underground garage lighting equipment will be replaced by Cheung innovative LED energy-saving lamps, and a total of 900 LED infrared sensor lamp, using the original lines, the lamp replaced all the energy-saving LED lights. Nobody, the lamp is dark, only 2.5 watts of power; someone has a car passed, brightness back to normal now, the power of 12 watts. Super power-saving LED infrared lamp lighting energy-saving than ordinary energy-saving lamps save 60% or more, plus Cheung innovative energy-saving control, energy saving can reach more than 80%.
Xiang innovative LED infrared lamp Features: Intelligent IC sound monitoring to control the car park each lighting LED infrared lamp, there is no vehicle access, all LED infrared lamp in a micro-light, super power saving mode, each LED infrared lamp-power 3-5W (arbitrarily chosen), to meet the requirements of the security monitoring lighting to save electricity, but also greatly limits. LED infrared lamps light a small decline: long life: Chung-hsiang, LED the infrared lamp using SMD3528 / 3014 and advanced production technology, light a small decline, the average life of 50,000 hours. 5000 hours average less than 8% of the light fades, 30,000 hours average less than 30% of the light fades. LED infrared lamp is easy to install, easy to maintain and do not need to change lamps, the Cheung LED infrared lamp replacement, without changing lines without modification ballast, you can simply remove the starter. No need to replace the starter to lower maintenance costs; electronic ballasts, shall remove the electronic ballast.
2013年1月4日星期五
The Switch Industry Needs Large - Toward High Noise Immunity
With the innovation of electrical equipment, switching power supply industry will also have more extensive prospects. In this opportunity, the Chinese enterprises should seize this opportunity, under the premise of the technological innovation and the development of routes out of the research peers, and create a new world for the high-speed development.
Switch, in life the most common but electronic equipment, room photoelectric switch, delay switch ... residential corridor switch demand in modern society. In recent years, with the rise of real estate, the switch demand along with high smart grid construction, is allowed to enter a period of rapid development.
Switching power supply definition
Switching power supply is the use of modern power electronics technology, control switch turn-on and turn-off time ratio, to maintain a stable output voltage of a power supply, switching power supply generally constitute by pulse width modulation (PWM) control IC and MOSFET. With the development of power electronics technology and innovation, so that the switching power supply technology is constantly innovating.
Switching power supply to a small, light-weight and high efficiency characteristics widely used in almost all electronic devices, today's electronic information industry, the rapid development of the indispensable power.
Switching power supply range of applications
Switching power supply products are widely used in industrial automation and control, military equipment, scientific equipment, LED lighting, industrial equipment, communications equipment, electrical equipment, instrumentation, medical equipment, semiconductor cooling and heating, air purifiers, electronic refrigerator, LCD display, LED lighting, communication equipment, audio-visual products, security monitoring, LED lights bags, computer cases, digital products and instruments and other fields.
Huge market demand of China's switchgear industry
According to relevant statistics, China's annual basic switchgear annual growth rate of 7% to 11%, which is a very large number. It is estimated that if the alternative to the traditional switch intelligent switch, according to the annual replacement rate of 3% to 5% of total annual demand will reach 30,000 to 50,000 units, which does not include the demand part of the new projects. The actual amount of low-voltage switchgear Although no accurate statistics, but the proportion of low-voltage switchgear, high voltage switch configuration roughly 1:12 to 1:15 On this basis, the annual demand of intelligent low-voltage switchgear should also be in the 500,000 to 700,000 units.
From the switchgear industry, 126 kV and above voltage level, including a rated voltage of 126 kV, 252 kV, 363 kV, 550 kV, 800 kV and other voltage level. The field of competition in the market is more gentle, on behalf of enterprises in addition to some well-known foreign companies, high domestic enterprises Zhongping Group, Xi'an opened, New Northeast Electric relatively large market share.
High-frequency technology to promote the development of the switch industry
The development direction of the switching power supply is a high-frequency, high reliability, low power consumption, low noise, interference. The switch is the development direction of the power of high-frequency, high-frequency switching power supply miniaturization, and switching power supply into a wide range of application areas, especially in high-tech fields, and promote the development and advancement of the switching power supply, annual more than two-digit growth rate toward the light, small, thin, low-noise, high reliability, anti-jamming direction.
Overall trend of switching power supply: modular
Modularity is the general trend of the development of the switching power supply, modular power supplies can be used to form a distributed power systems, N redundant power system can be designed and capacity expansion in parallel. Running noise of the switching power supply shortcomings, if the individual pursuit of high frequency noise will also increased, while the use of part of the resonant converter circuit technology, in theory, to achieve high-frequency technology can also reduce noise, but some The practical application of resonant converter technology there are still technical problems, it still needs a lot of work in this field, so that the technology to practical use.
Switch, in life the most common but electronic equipment, room photoelectric switch, delay switch ... residential corridor switch demand in modern society. In recent years, with the rise of real estate, the switch demand along with high smart grid construction, is allowed to enter a period of rapid development.
Switching power supply definition
Switching power supply is the use of modern power electronics technology, control switch turn-on and turn-off time ratio, to maintain a stable output voltage of a power supply, switching power supply generally constitute by pulse width modulation (PWM) control IC and MOSFET. With the development of power electronics technology and innovation, so that the switching power supply technology is constantly innovating.
Switching power supply to a small, light-weight and high efficiency characteristics widely used in almost all electronic devices, today's electronic information industry, the rapid development of the indispensable power.
Switching power supply range of applications
Switching power supply products are widely used in industrial automation and control, military equipment, scientific equipment, LED lighting, industrial equipment, communications equipment, electrical equipment, instrumentation, medical equipment, semiconductor cooling and heating, air purifiers, electronic refrigerator, LCD display, LED lighting, communication equipment, audio-visual products, security monitoring, LED lights bags, computer cases, digital products and instruments and other fields.
Huge market demand of China's switchgear industry
According to relevant statistics, China's annual basic switchgear annual growth rate of 7% to 11%, which is a very large number. It is estimated that if the alternative to the traditional switch intelligent switch, according to the annual replacement rate of 3% to 5% of total annual demand will reach 30,000 to 50,000 units, which does not include the demand part of the new projects. The actual amount of low-voltage switchgear Although no accurate statistics, but the proportion of low-voltage switchgear, high voltage switch configuration roughly 1:12 to 1:15 On this basis, the annual demand of intelligent low-voltage switchgear should also be in the 500,000 to 700,000 units.
From the switchgear industry, 126 kV and above voltage level, including a rated voltage of 126 kV, 252 kV, 363 kV, 550 kV, 800 kV and other voltage level. The field of competition in the market is more gentle, on behalf of enterprises in addition to some well-known foreign companies, high domestic enterprises Zhongping Group, Xi'an opened, New Northeast Electric relatively large market share.
High-frequency technology to promote the development of the switch industry
The development direction of the switching power supply is a high-frequency, high reliability, low power consumption, low noise, interference. The switch is the development direction of the power of high-frequency, high-frequency switching power supply miniaturization, and switching power supply into a wide range of application areas, especially in high-tech fields, and promote the development and advancement of the switching power supply, annual more than two-digit growth rate toward the light, small, thin, low-noise, high reliability, anti-jamming direction.
Overall trend of switching power supply: modular
Modularity is the general trend of the development of the switching power supply, modular power supplies can be used to form a distributed power systems, N redundant power system can be designed and capacity expansion in parallel. Running noise of the switching power supply shortcomings, if the individual pursuit of high frequency noise will also increased, while the use of part of the resonant converter circuit technology, in theory, to achieve high-frequency technology can also reduce noise, but some The practical application of resonant converter technology there are still technical problems, it still needs a lot of work in this field, so that the technology to practical use.
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